1 August 1989 Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels
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Abstract
Functioning 0.5 µm N-MOS test devices have been fabricated by means of X-ray lithography at all four levels. All exposures were carried out with synchrotron radiation of the BESSY storage ring in Berlin. This paper describes the performance of X-ray exposure and the resist system with regard to mask pattern placement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1σ) in x and y direction and overall linewidth variation of 23 nm (1σ) within a 4 inch wafer on etched poly-Si structures have been achieved. Electrical results of 0.5 μm N-MOS transistors with long channel behaviour up to 3.5 V supply voltage will be shown.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Detlef Friedrich, Helmut Bernt, Hans L. Huber, Wolfgang Windbracke, Gerfried Zwicker, "Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968528; https://doi.org/10.1117/12.968528
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