1 August 1989 Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels
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Abstract
Functioning 0.5 µm N-MOS test devices have been fabricated by means of X-ray lithography at all four levels. All exposures were carried out with synchrotron radiation of the BESSY storage ring in Berlin. This paper describes the performance of X-ray exposure and the resist system with regard to mask pattern placement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1σ) in x and y direction and overall linewidth variation of 23 nm (1σ) within a 4 inch wafer on etched poly-Si structures have been achieved. Electrical results of 0.5 μm N-MOS transistors with long channel behaviour up to 3.5 V supply voltage will be shown.
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Detlef Friedrich, Detlef Friedrich, Helmut Bernt, Helmut Bernt, Hans L. Huber, Hans L. Huber, Wolfgang Windbracke, Wolfgang Windbracke, Gerfried Zwicker, Gerfried Zwicker, } "Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968528; https://doi.org/10.1117/12.968528
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