1 August 1989 Resist Modeling Near Resolution And Sensitivity Limits In X -Ray Lithography
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Abstract
The impact of statistical fluctuations due to the finite number of quanta absorbed during the exposure of high �speed X � ray photoresists on photoresist development and lithographic structure transfer is examined. Evidence for percolation processes during photoresist development is provided, and theoretical models are presented in the form of a Monte � Carlo type computer experiment, and a statistical analysis of surface clusters by means of a simple continuous � space percolation model. Finally achievable structure transfer is analyzed in terms of the optical and statistical components of the normalized process parameter NPL.
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H. Oertel, H. Oertel, M. Weiss, M. Weiss, J. Chlebek, J. Chlebek, H. L. Huber, H. L. Huber, R. Dammel, R. Dammel, C. R. Lindley, C. R. Lindley, J. Lingnau, J. Lingnau, J. Theis, J. Theis, } "Resist Modeling Near Resolution And Sensitivity Limits In X -Ray Lithography", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968537; https://doi.org/10.1117/12.968537
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