1 August 1989 Resist Modeling Near Resolution And Sensitivity Limits In X -Ray Lithography
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The impact of statistical fluctuations due to the finite number of quanta absorbed during the exposure of high �speed X � ray photoresists on photoresist development and lithographic structure transfer is examined. Evidence for percolation processes during photoresist development is provided, and theoretical models are presented in the form of a Monte � Carlo type computer experiment, and a statistical analysis of surface clusters by means of a simple continuous � space percolation model. Finally achievable structure transfer is analyzed in terms of the optical and statistical components of the normalized process parameter NPL.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Oertel, H. Oertel, M. Weiss, M. Weiss, J. Chlebek, J. Chlebek, H. L. Huber, H. L. Huber, R. Dammel, R. Dammel, C. R. Lindley, C. R. Lindley, J. Lingnau, J. Lingnau, J. Theis, J. Theis, } "Resist Modeling Near Resolution And Sensitivity Limits In X -Ray Lithography", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968537; https://doi.org/10.1117/12.968537

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