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13 March 2019 410W single stage in band pumped Nd:YVO4 INNOSLAB amplifier for ps pulses (Conference Presentation)
Marco Höfer, Jhon Jairo Vera Mosquera, Robin Lutum, Benjamin Erben, Hans-Dieter Hoffman
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Proceedings Volume 10896, Solid State Lasers XXVIII: Technology and Devices; 108960G (2019) https://doi.org/10.1117/12.2508610
Event: SPIE LASE, 2019, San Francisco, California, United States
Abstract
We report an in band pumped single-stage 410 W INNOSLAB laser amplifier based on Nd:YVO4. VBG stabilized diodes are used to pump the crystal from both end faces at 880 nm wavelength. At 3 W@800KHz input power and a pulse duration of 300 ps an extraction efficiency of 44% is achieved. A beam quality of M2<1.5 (4-Sigma Method) and M2<1.3 (10/90 Knife Edge Method) is measured over the whole power range. The output beam is free of self-lasing or CW-background.
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Marco Höfer, Jhon Jairo Vera Mosquera, Robin Lutum, Benjamin Erben, and Hans-Dieter Hoffman "410W single stage in band pumped Nd:YVO4 INNOSLAB amplifier for ps pulses (Conference Presentation)", Proc. SPIE 10896, Solid State Lasers XXVIII: Technology and Devices, 108960G (13 March 2019); https://doi.org/10.1117/12.2508610
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KEYWORDS
Neodymium lasers
Picosecond phenomena
Amplifiers
Crystals
Diodes
Laser amplifiers
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