Single mode 500 mW at 633 nm using all semiconductor master oscillator and a dual stage amplifier

G. Blume; A. Koyucuoglu; J. Pohl; D. Feise; A. Sahm; K. Paschke

doi:10.1117/12.2509526

4 March 2019 Single mode 500 mW at 633 nm using all semiconductor master oscillator and a dual stage amplifier

G. Blume, A. Koyucuoglu, J. Pohl, D. Feise, A. Sahm, K. Paschke

Proceedings Volume 10899, Components and Packaging for Laser Systems V; 1089906 (2019) https://doi.org/10.1117/12.2509526
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

Several holographic and interferometric applications would benefit significantly from a diode laser based coherent light source near 633 nm. For this purpose a miniaturized master-oscillator power-amplifier (MOPA) was developed. The MOPA is integrated in a sealed package together with a custom-built micro-optical isolator to shield the MO from optical feedback. The MOPA reaches an optical output power of up to 70 mW near 633 nm. The power is boosted by a second, external amplifier to more than 500 mW. The package offers space for the future integration of the second amplifier stage.

Conference Presentation

Citation Download Citation

G. Blume, A. Koyucuoglu, J. Pohl, D. Feise, A. Sahm, and K. Paschke "Single mode 500 mW at 633 nm using all semiconductor master oscillator and a dual stage amplifier", Proc. SPIE 10899, Components and Packaging for Laser Systems V, 1089906 (4 March 2019); https://doi.org/10.1117/12.2509526

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