Advances in commercial semiconductor disk lasers (Conference Presentation)

David Paboeuf; C. Robin Head; Walter Lubeigt; Nils Hempler; Gareth T. Maker; Graeme P. A. Malcolm; Joseph Thom

doi:10.1117/12.2513524

13 March 2019 Advances in commercial semiconductor disk lasers (Conference Presentation)

David Paboeuf, C. Robin Head, Walter Lubeigt, Nils Hempler, Gareth T. Maker, Graeme P. A. Malcolm, Joseph Thom

Proceedings Volume 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX; 109010S (2019) https://doi.org/10.1117/12.2513524
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

An ultrafast semiconductor disk laser (SDL) and a single frequency continuous SDL, respectively named Dragonfly and Infinite are currently under development at M Squared lasers with the aim of offering an alternative to Titanium-sapphire based systems. Such SDLs-based systems have the potential to be easy-to-use, low-cost and maintenance free tools for markets including nonlinear microscopy and quantum technologies. Introducing the SDLs technology into the nonlinear microscopy market requires reproducing the performances of currently employed systems: pulses with 1-W average power, duration below 200fs and a typical repetition rate of 80MHz. Such a low repetition rate is particularly challenging for SDLs which are limited by their short carrier lifetime and preferably operate at GHz repetition rates. With Dragonfly, a repetition rate of 200 MHz has been found as a good compromise to balance the mode-locking instabilities while reducing the repetition rate. By adding external pulse compression and spectral broadening stages, pulses as short as 130fs and an average power of 0.85W have been achieved. Developing low-footprint, single-frequency narrow-linewidth CW SDLs could enable quantum technologies to move from the lab to successful commercialisation. In this context, we have been developing a variant of the Infinite system suitable for Sr atom cooling. About 1W and a sub-MHz linewidth at 461nm are required. As direct emission is not an option, an SDL emitting at 922nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered > 1W at 922nm with an RMS frequency noise < 150kHz.

Conference Presentation

Citation Download Citation

David Paboeuf, C. Robin Head, Walter Lubeigt, Nils Hempler, Gareth T. Maker, Graeme P. A. Malcolm, and Joseph Thom "Advances in commercial semiconductor disk lasers (Conference Presentation)", Proc. SPIE 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX, 109010S (13 March 2019); https://doi.org/10.1117/12.2513524

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KEYWORDS

Semiconductor lasers

Disk lasers

Semiconductors

Complex systems

Microscopy

Chemical species

Mode locking

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