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4 March 2019 1.55-μm wavelength wafer-fused OP-VECSELs in flip-chip configuration
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Abstract
Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-μm wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors, which were incorporated in a linear and a V-cavity configurations. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11°C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. The demonstration represents more than 10-fold increase of the output power compared to state-of-the-art flip-chip VECSELs previously demonstrated at the 1.55-μm wavelength range, and opens a new perspective for developing practical VECSEL-based laser system for applications such as LIDAR, spectroscopy, communications and distributed sensing.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandru Mereuta, Kostiantyn Nechay, Andrei Caliman, Grigore Suruceanu, Pascal Gallo, Mircea Guina, and Eli Kapon "1.55-μm wavelength wafer-fused OP-VECSELs in flip-chip configuration", Proc. SPIE 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX, 1090103 (4 March 2019); https://doi.org/10.1117/12.2508342
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