Fabrication of multicomponent semiconductor microspheres by laser ablation in air (Conference Presentation)

Daisuke Nakamura; Yuichiro Wakiyama; Hiroki Oshima; Mitsuhiro Higashihata; Hiroshi Ikenoue; Nilesh J. Vasa; M. S. Ramachandra Rao

doi:10.1117/12.2510985

13 March 2019 Fabrication of multicomponent semiconductor microspheres by laser ablation in air (Conference Presentation)

Daisuke Nakamura, Yuichiro Wakiyama, Hiroki Oshima, Mitsuhiro Higashihata, Hiroshi Ikenoue, Nilesh J. Vasa, M. S. Ramachandra Rao

Author Affiliations +

Proceedings Volume 10905, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV; 1090510 (2019) https://doi.org/10.1117/12.2510985
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

We have demonstrated the fabrication of semiconductor microspherical crystals such as ZnO and Si microspheres by a simple laser ablation technique. In addition, doped and alloyed microspheres have achieved by this technique. The fabrication mechanism of the spherical crystals is based on instantaneous heating of target material, formation of spherical shape by surface tension of liquid-state material, and rapid freezing with keeping the spherical shape. In this study, the technique is expanded to other various materials, and microspheres consisting of multicomponent semiconductor such as Sr3Sn2O7 was successfully fabricated. This technique is a candidate for fabrication of functional microspherical crystals.

Conference Presentation

Citation Download Citation

Daisuke Nakamura, Yuichiro Wakiyama, Hiroki Oshima, Mitsuhiro Higashihata, Hiroshi Ikenoue, Nilesh J. Vasa, and M. S. Ramachandra Rao "Fabrication of multicomponent semiconductor microspheres by laser ablation in air (Conference Presentation)", Proc. SPIE 10905, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV, 1090510 (13 March 2019); https://doi.org/10.1117/12.2510985

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