Quantum Optical Lithography at 3 nm resolution
Eugen Pavel(1)* and Gabriel Prodan(2)
(1) Storex Technologies, 274 Calea Mosilor, Bucharest 020892, Romania,
(2) “Ovidius” University of Constanta, Faculty of Mechanical, Industrial and Marine Engineering,
124 Mamaia Bd., 900527 Constanta, Romania
Development of big data centers, Artificial Intelligence (AI) and Internet of Things (IoT) require novel approaches in semiconductor technologies. Lithography, as key element in this process, needs to be extended into the sub-10 nm range. Manipulation of matter at the nanoscale in the range 1-10 nm, in order to produce complex patterns, was possible by three lithographic techniques: i) electron beam lithography(EBL) /electron beam induced deposition (EBID) / helium ion beam lithography (HIBL), ii) scanning probe lithography (SPL) and iii) Quantum Optical Lithography (QOL) [1-2]. Here, we report the realization for the first time, by optical means, of complex structures with 3 nm linewidth using QOL. Compared to the above-mentioned lithographic techniques, QOL has the advantage of 3D writing.
In this presentation, a diffraction-unlimited method (QOL) for nanofabrication is unveiled with applications in prototyping complex nanostructures.
 E. Pavel, S. Jinga, B.S. Vasile, A. Dinescu, V. Marinescu, R. Trusca and N. Tosa, “Quantum Optical Lithography
from 1 nm resolution to pattern transfer on silicon wafer“, Optics and Laser Technology, 60 , 80–84 (2014).
 E. Pavel, S. Jinga, E. Andronescu, B.S. Vasile, G. Kada, A. Sasahara, N. Tosa, A. Matei, M. Dinescu,
A. Dinescu, and O.R. Vasile, “2 nm Quantum Optical Lithography”, Optics Communications 291, 259–263