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4 March 2019 Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication
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Abstract
The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3 , 18.1 %, and 8.5 × 10−5 Ω⋅cm2 , respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.
Conference Presentation
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Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, and Hiroshi Ikenoue "Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication", Proc. SPIE 10906, Laser-based Micro- and Nanoprocessing XIII, 109060J (4 March 2019); doi: 10.1117/12.2509141; https://doi.org/10.1117/12.2509141
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