Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

F. Atteia; J. Le Rouzo; G. Berginc; J. J. Simon; L. Escoubas

doi:10.1117/12.2509326

27 February 2019 Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

F. Atteia, J. Le Rouzo, G. Berginc, J. J. Simon, L. Escoubas

Author Affiliations +

Proceedings Volume 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII; 109130U (2019) https://doi.org/10.1117/12.2509326
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Black silicon processing is a promising research area to improve optical properties of silicon solar cells. Currently, RIE method is used at cryogenic temperature because it enables a very good control of shapes of nano-structures but working at cryogenic temperature in a clean room can be an issue. In order to produce black silicon under realistic industrial conditions, room temperature process has to be achieved. We present a study aiming at etching silicon wafer surfaces using “Room Temperature SF₆/O₂ Reactive Ion Etching” (RT-RIE).

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Citation Download Citation

F. Atteia, J. Le Rouzo, G. Berginc, J. J. Simon, and L. Escoubas "Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells", Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130U (27 February 2019); https://doi.org/10.1117/12.2509326

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