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27 February 2019 Effect of capping rate on InAs/GaAs quantum dot solar cells
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Abstract
The unavoidable presence of the wetting layer (WL) in Stranski-Krastanov quantum dots (QD) has typically a negative impact on the performance of QD solar cells. In this work, a simple method to engineer the WL of InAs/GaAs QD solar cells is investigated. In particular, we show that covering the QDs at high GaAs capping rates reduces In-Ga intermixing and, therefore, In redistribution from the QDs to the WL. This results not only in larger QDs, but also in thinner WLs, with larger quantum confinement energies and reduced potential barriers for electrons and holes. Carrier trapping by the WLs and subsequent recombination is therefore reduced, resulting in larger photocurrent values of the QD solar cells under short circuit conditions.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Stanojević, A. Gonzalo, A. D. Utrilla, D. F. Reyes, V. Braza, D. González, D. Fuertes Marrón, A. Hierro, and J. M. Ulloa "Effect of capping rate on InAs/GaAs quantum dot solar cells", Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 1091312 (27 February 2019); https://doi.org/10.1117/12.2509484
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