Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform

Bong Kwon Son; Yiding Lin; Wei Li; Kwang Hong Lee; Joe Margetis; David Kohen; John Tolle; Lin Zhang; Tina Guo Xin; Hong Wang; Chuan Seng Tan

doi:10.1117/12.2506355

27 February 2019 Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform

Bong Kwon Son, Yiding Lin, Wei Li, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Lin Zhang, Tina Guo Xin, Hong Wang, Chuan Seng Tan

Author Affiliations +

Proceedings Volume 10914, Optical Components and Materials XVI; 109141A (2019) https://doi.org/10.1117/12.2506355
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In this work, metal-semiconductor-metal photodetectors (MSM PDs) on a GeSn-on-insulator (GeSnOI) platform were demonstrated. This platform was realized by direct wafer bonding (DWB) and layer transfer methods using 9% Sn composition of GeSn film epitaxial-grown on Si. The compressive strain in the GeSn film was observed as ~0.23%, which indicates a significant reduction of the strain compared to the ~5.5% lattice mismatch at an interface of the Ge_0.91Sn_0.09/Si. GeSn MSM PDs demonstrated on a GeSnOI platform displayed a low dark current of 4nA at a 1V of bias voltage due to the insertion of a thin aluminum oxide (Al₂O₃) layer in an interface of metal/GeSn for an alleviation of Fermi-level pinning. The responsivity was 0.5 and 0.29 A/W at the wavelength of 1,600 and 2,033nm at 2V, respectively. This work paves the way for GeSnOI photonics as the next promising platform along with Si-on-insulator (SOI) and Ge-on-insulator (GOI) platforms for mid-infrared (MIR) communication and sensing applications.

Citation Download Citation

Bong Kwon Son, Yiding Lin, Wei Li, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Lin Zhang, Tina Guo Xin, Hong Wang, and Chuan Seng Tan "Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform", Proc. SPIE 10914, Optical Components and Materials XVI, 109141A (27 February 2019); https://doi.org/10.1117/12.2506355

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