Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

M. Monti; J. M. Woolley; M. Staniforth; A. Wijesekara; S. X. Tao; R. M. I. Bandara; I. Jayawardena; A. Crocker; E. Griffin; S. R. P. Silva; R. A. Hatton; J. Lloyd-Hughes

doi:10.1117/12.2507268

27 February 2019 Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

M. Monti, J. M. Woolley, M. Staniforth, A. Wijesekara, S. X. Tao, R. M. I. Bandara, I. Jayawardena, A. Crocker, E. Griffin, S. R. P. Silva, R. A. Hatton, J. Lloyd-Hughes

Author Affiliations +

Proceedings Volume 10916, Ultrafast Phenomena and Nanophotonics XXIII; 109160M (2019) https://doi.org/10.1117/12.2507268
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs_1-xRb_xSnI₃ and compared to the lead based Cs_0:05(FA_0:83MA_0:17)_0:95Pb(I_0:83Br_0:17)₃. Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

Conference Presentation

Citation Download Citation

M. Monti, J. M. Woolley, M. Staniforth, A. Wijesekara, S. X. Tao, R. M. I. Bandara, I. Jayawardena, A. Crocker, E. Griffin, S. R. P. Silva, R. A. Hatton, and J. Lloyd-Hughes "Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling", Proc. SPIE 10916, Ultrafast Phenomena and Nanophotonics XXIII, 109160M (27 February 2019); https://doi.org/10.1117/12.2507268

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available