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1 March 2019 Graphene-based 2D-heterostructures for terahertz lasers and amplifiers
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Abstract
This paper reviews recent advances in the terahertz (THz) graphene-based 2D-heterostructure lasers and amplifiers. The linear gapless graphene energy spectrum enables population inversion under optical and electrical pumping giving rise to the negative dynamic conductivity in a wide THz frequency range. We first theoretically discovered these phenomena and recently reported on the experimental observation of the amplified spontaneous THz emission and single-mode THz lasing at 100K in the current-injection pumped graphene-channel field-effect transistors (GFETs) with a distributedfeedback dual-gate structure. We also observed the light amplification of stimulated emission of THz radiation driven by graphene-plasmon instability in the asymmetric dual-grating gate (ADGG) GFETs by using a THz time-domain spectroscopy technique. Integrating the graphene surface plasmon polariton (SPP) oscillator into a current-injection graphene THz laser transistor is the most promising approach towards room-temperature intense THz lasing.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Yadav, S. Boubanga-Tombet, A. Satou, T. Tamamushi, T. Watanabe, T. Suemitsu, H. Fukidome, M. Suemitsu, A. A. Dubinov, V. V. Popov, M. Ryzhii, V. Mitin, M. S. Shur, V. Ryzhii, and T. Otsuji "Graphene-based 2D-heterostructures for terahertz lasers and amplifiers", Proc. SPIE 10917, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, 109170G (1 March 2019); https://doi.org/10.1117/12.2516494
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