PROCEEDINGS VOLUME 10918
SPIE OPTO | 2-7 FEBRUARY 2019
Gallium Nitride Materials and Devices XIV
IN THIS VOLUME

16 Sessions, 25 Papers, 40 Presentations
Growth I  (4)
Growth II  (2)
Doping  (3)
Laser Diodes  (2)
VCSEL I  (1)
VCSEL II  (3)
Micro LEDs I  (3)
UV LEDs  (3)
LEDs  (3)
Proceedings Volume 10918 is from: Logo
SPIE OPTO
2-7 February 2019
San Francisco, California, United States
Front Matter: Volume 10918
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091801 (7 May 2019); doi: 10.1117/12.2531211
Growth I
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091802 (8 March 2019); doi: 10.1117/12.2506774
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091803 (13 March 2019); doi: 10.1117/12.2511100
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091804 (13 March 2019); doi: 10.1117/12.2508154
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091805 (13 March 2019); doi: 10.1117/12.2507526
Growth II
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180A (1 March 2019); doi: 10.1117/12.2508490
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180B (8 March 2019); doi: 10.1117/12.2508386
Material Characterization I
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180C (13 March 2019); doi: 10.1117/12.2509655
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180E (1 March 2019); doi: 10.1117/12.2510860
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180G (13 March 2019); doi: 10.1117/12.2507606
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180I (1 March 2019); doi: 10.1117/12.2508717
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180J (13 March 2019); doi: 10.1117/12.2510634
Material Characterization II
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180L (13 March 2019); doi: 10.1117/12.2511006
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180M (1 March 2019); doi: 10.1117/12.2509396
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180O (1 March 2019); doi: 10.1117/12.2510846
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180Q (1 March 2019); doi: 10.1117/12.2510488
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180R (13 March 2019); doi: 10.1117/12.2509713
Material Characterization III
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180T (13 March 2019); doi: 10.1117/12.2511132
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180U (13 March 2019); doi: 10.1117/12.2509370
Doping
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180V (13 March 2019); doi: 10.1117/12.2508417
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180X (13 March 2019); doi: 10.1117/12.2506824
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180Y (13 March 2019); doi: 10.1117/12.2510035
Nanostructures
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180Z (1 March 2019); doi: 10.1117/12.2512638
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091814 (1 March 2019); doi: 10.1117/12.2507880
Electron Devices
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091815 (13 March 2019); doi: 10.1117/12.2509733
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091816 (1 March 2019); doi: 10.1117/12.2510582
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091817 (1 March 2019); doi: 10.1117/12.2511145
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091818 (13 March 2019); doi: 10.1117/12.2510415
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091819 (1 March 2019); doi: 10.1117/12.2510348
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181A (1 March 2019); doi: 10.1117/12.2507398
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181B (1 March 2019); doi: 10.1117/12.2507016
Laser Diodes
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181D (1 March 2019); doi: 10.1117/12.2505309
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181F (1 March 2019); doi: 10.1117/12.2502649
VCSEL I
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181H (1 March 2019); doi: 10.1117/12.2511293
VCSEL II
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181J (1 March 2019); doi: 10.1117/12.2511469
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181L (1 March 2019); doi: 10.1117/12.2511134
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181M (1 March 2019); doi: 10.1117/12.2510269
Micro LEDs I
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181N (5 March 2019); doi: 10.1117/12.2503586
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181O (18 March 2019); doi: 10.1117/12.2507699
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181Q (1 March 2019); doi: 10.1117/12.2509915
Micro LEDs II
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181R (1 March 2019); doi: 10.1117/12.2506921
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181U (5 March 2019); doi: 10.1117/12.2506959
UV LEDs
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181V (5 March 2019); doi: 10.1117/12.2505751
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181X (1 March 2019); doi: 10.1117/12.2506210
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181Z (5 March 2019); doi: 10.1117/12.2509064
LEDs
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091820 (5 March 2019); doi: 10.1117/12.2511208
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091821 (5 March 2019); doi: 10.1117/12.2512662
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091822 (1 March 2019); doi: 10.1117/12.2506426
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