Open Access Paper
7 May 2019 Front Matter: Volume 10918
Abstract
This PDF file contains the front matter associated with SPIE Proceedings Volume 10918, including the Title Page, Copyright information, Table of Contents, Author and Conference Committee lists.

The papers in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. Additional papers and presentation recordings may be available online in the SPIE Digital Library at SPIEDigitalLibrary.org.

The papers reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.

Please use the following format to cite material from these proceedings:

Author(s), “Title of Paper,” in Gallium Nitride Materials and Devices XIV, edited by Hiroshi Fujioka, Hadis Morkoç, Ulrich T. Schwarz, Proceedings of SPIE Vol. 10918 (SPIE, Bellingham, WA, 2019) Seven-digit Article CID Number.

ISSN: 0277-786X

ISSN: 1996-756X (electronic)

ISBN: 9781510624788

ISBN: 9781510624795 (electronic)

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Paper Numbering: Proceedings of SPIE follow an e-First publication model. A unique citation identifier (CID) number is assigned to each article at the time of publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online and print versions of the publication. SPIE uses a seven-digit CID article numbering system structured as follows:

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  • The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc. The CID Number appears on each page of the manuscript.

Authors

Numbers in the index correspond to the last two digits of the seven-digit citation identifier (CID) article numbering system used in Proceedings of SPIE. The first five digits reflect the volume number. Base 36 numbering is employed for the last two digits and indicates the order of articles within the volume. Numbers start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B…0Z, followed by 10-1Z, 20-2Z, etc.

Alatawi, Abdullah A., 1X

Albadri, Abdulrahman M., 1X

Albrecht, John D., 0I

Alfaraj, Nasir, 1X

Alhamoud, Abdullah A., 1X

Alyamani, Ahmed Y., 1X

Anderson, Travis J., 16

Ayon, Arturo A., 19

Babu, Sachidananda, 14

Bakhtiary-Noodeh, Marzieh, 14

Barbato, Alessandro, 17

Barbato, Marco, 17

Bayram, Can, 22

Bédoin, Alexis, 1Q

Bernard, Jeannet, 1Q

Biswas, Mahitosh, 0A

Bonsall, Jeremy, 1B

Borga, Matteo, 17

Bozok, Berkay, 1A

Brodie, Miles, 1B

Butun, Bayram, 1A

Canato, Eleonora, 17

Caplet, Stéphane, 1Q

Cetnar, John S., 19

Chakrabarti, Subhananda, 0A

Chen, J. C., 1R

Chen, Songtao, 1M

Cheung, Y. F., 1O

Chiocchetta, Francesca, 17

Cho, Sang June, 0I

Choi, H. W., 1O

Daami, Anis, 0M

Dalmau, Rafael, 0I

Das, Debabrata, 0A

De Santi, Carlo, 17

Detchprohm, Theeradetch, 0E, 14

Dhar, Nibir K., 14

Dupré, Ludovic, 0M

Dupuis, Russell D., 0E, 14

ElAfandy, Rami T., 1M

El-Ghoroury, Hussein S., 1R

Encomendero, Jimy, 0Z

Fabris, Elena, 17

Feigelson, Boris N., 16

Foran, Brendan, 1B

Fu, W. Y., 1O

Gallagher, James C., 16

Ghasempour, Askari, 0O

Ghuman, P. Parminder, 14

Gulseren, Melisa Ekin, 1A

Haas, Helge, 1Q

Hamaguchi, Tatsushi, 1J

Han, Jung, 1M

Hartensveld, Matthew, 0Q

Hayashi, Kentaro, 1J

Heller, Eric, 19

Henry, Franck, 0M

Hirao, Tsuyoshi, 1D

Hite, Jennifer K., 16

Hobart, Karl D., 16

Huang, Rui, 1F

Ito, Masamichi, 1J

Jacobs, Alan G., 16

Janjua, Bilal, 1X

Jena, Debdeep, 0Z

Jeong, Hoon, 0E, 14

Ji, Mi-Hee, 14

Jyokawa, Tatsuro, 1J

Kalapala, Akhil R. K., 0I

Kayal, Omer Ahmet, 1A

Kobayashi, Noriko, 1J

Koda, Rintaro, 1J

Koehler, Andrew D., 16

Kozuru, Kazuma, 1D

Kub, Francis J., 16

Kumar, Raman, 0A

Kumar, Ravinder, 0A

Kurt, Gokhan, 1A

Lan, Tian, 1F

Le Calvez, Stéphanie, 0M

Lewis, Jay, 14

Li, K. H., 1O

Li, Ying, 1F

Licitra, Christophe, 0M

Lingley, Zachary, 1B

Liu, Cheng, 0Q

Liu, Dong, 0I

Liu, J. P., 1H

Liu, Richard, 22

Long, H., 1H

Look, David C., 19

Luna, Lunet E., 16

Ma, Zhenqiang, 0I

Masin, Fabrizio, 17

Masui, Shingo, 1D

Mato, Tatsuya, 1J

McCormick, Callan, 22

Mehta, Karan, 0E

Mei, Y., 1H

Melanson, Bryan, 0Q

Meneghesso, Gaudenzio, 17

Meneghini, Matteo, 17

Mi, Zetian, 0A

Moody, Baxter, 0I

Nagahama, Shin-ichi, 1D

Nagao, Yoji, 1D

Nakajima, Hiroshi, 1J

Nakajima, Yoshitake, 1R

Nakatsu, Yoshitaka, 1D

Nardo, Arianna, 17

Ndi, Francis, 0O

Ng, Tien Khee, 1X

Nurmikko, Arto, 1M

Ohara, Maho, 1J

Okahisa, Eiichiro, 1D

Olivier, François, 0M

Ooi, Boon S., 1X

Ooi, Yu Kee, 0Q

Ozbay, Ekmel, 1A

Ozturk, Mustafa, 1A

Pan, Xinhua, 0O

Panda, Debiprasad, 0A

Park, Jeongpil, 0I

Park, Young-Jae, 0E

Priante, Davide, 1X

Price, Alain, 0O

Rahimi, Nassim, 0O

Rampazzo, Fabiana, 17

Ruzzarin, Maria, 17

Sarzała, R. P., 1L

Shen, Shyh-Chiang, 0E, 14

Sin, Yongkun, 1B

Sitzman, Scott, 1B

Sood, Ashok K., 14

Spiewak, P., 1L

Tajalli, Alaleh, 17

Tanaka, Masayuki, 1J

Templier, François, 0M, 1Q

Tsou, Chuan-Wei, 0E

Upadhyay, Sourabh, 0A

Ural, Sertac, 1A

Vazquez-Colon, Clarissa D., 19

Veksler, Dmitry, 1B

Wang, Congcong, 1F

Wang, Jialin, 0E

Wang, Zhiyong, 1F

Wasiak, M., 1L

Watanabe, Hideki, 1J

Xing, Huili Grace, 0Z

Xu, R. B., 1H

Yan, Anru, 1F

Yanamoto, Tomoya, 1D

Yanashima, Katsunori, 1J

Yeh, Milton, 1R

Ying, L. Y., 1H

Yoder, P. Douglas, 0E

Zanoni, Enrico, 17

Zhang, B. P., 1H

Zhang, Cheng, 1M

Zhang, Jerry, 1M

Zhang, Jing, 0Q

Zhao, Deyin, 0I

Zhao, Songrui, 0A

Zheng, Z. W., 1H

Zhou, Guangzheng, 1F

Zhou, Weidong, 0I

Conference Committee

Symposium Chairs

  • Connie J. Chang-Hasnain, University of California, Berkeley (United States)

  • Graham T. Reed, Optoelectronics Research Center (United Kingdom)

Symposium Co-chairs

  • Sailing He, KTH Royal Institute of Technology (Sweden) and Zhejiang University (China)

  • Yasuhiro Koike, Keio University (Japan)

Program Track Chairs

  • James G. Grote, Photonics Consultant (United States)

  • Shibin Jiang, AdValue Photonics, Inc. (United States)

Conference Chairs

  • Hiroshi Fujioka, The University of Tokyo (Japan)

  • Hadis Morkoç, Virginia Commonwealth University (United States)

  • Ulrich T. Schwarz, Technische Universität Chemnitz (Germany)

Conference Co-chairs

  • Jen-Inn Chyi, National Central University (Taiwan)

  • Jung Han, Yale University (United States)

  • Motoaki Iwaya, Meijo University (Japan)

Conference Program Committee

  • Frank Bertram, Otto-von-Guericke-Universität Magdeburg (Germany)

  • Michal Bockowski, Institute of High Pressure Physics (Poland)

  • Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik (Germany)

  • Mitch M. C. Chou, National Sun Yat-Sen University (Taiwan)

  • Martin Feneberg, Otto-von-Guericke-Universität Magdeburg (Germany)

  • Mitsuru Funato, Kyoto University (Japan)

  • Bernard Gil, Laboratoire Charles Coulomb (France)

  • Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)

  • Hideki Hirayama, RIKEN (Japan)

  • Ray-Hua Horng, National Chiao Tung University (Taiwan)

  • Chih-Fang Huang, National Tsing Hua University (Taiwan)

  • Michael Kneissl, Technische Universität Berlin (Germany)

  • Elison Matioli, Ecole Polytechnique Fédérale de Lausanne (Switzerland)

  • Koh Matsumoto, Taiyo Nippon Sanso Corporation (Japan)

  • Hideto Miyake, Mie University (Japan)

  • Eva Monroy, Commissariat à l’Énergie Atomique (France)

  • Yong-Tae Moon, LG Electronics Inc. (Korea, Republic of)

  • Yasushi Nanishi, Ritsumeikan University (Japan)

  • Ümit Özgür, Virginia Commonwealth University (United States)

  • Piotr Perlin, Institute of High Pressure Physics (Poland)

  • Fan Ren, University of Florida (United States)

  • Tae-Yeon Seong, Korea University (Korea, Republic of)

  • Bo Shen, Peking University (China)

  • Jong-In Shim, Hanyang University (Korea, Republic of)

  • Maria Tchernycheva, Université Paris-Sud 11 (France)

  • Akio Wakejima, Nagoya Institute of Technology (Japan)

  • Chih-Chung Yang, National Taiwan University (Taiwan)

  • Euijoon Yoon, Seoul National University (Korea, Republic of)

Session Chairs

  • 1 Growth I

    Ulrich T. Schwarz, Technische Universität Chemnitz (Germany)

  • 2 Growth II

    Ferdinand Scholz, Universität Ulm (Germany)

  • 3 Material Characterization I

    Frank Bertram, Otto-von-Guericke-Universität Magdeburg (Germany)

  • 4 Material Characterization II

    Ulrich T. Schwarz, Technische Universität Chemnitz (Germany)

  • 5 Material Characterization III

    Jesús Zúñiga-Pérez, Centre de Recherche sur l’Hétéroepitaxie et ses Applications (France)

  • 6 Doping

    Russell D. Dupuis, Georgia Institute of Technology (United States)

  • 7 Nanostructures

    Pierre Ruterana, Centre de Recherche sur les Ions, les Matériaux et la Photonique (France)

  • 8 Electron Devices

    Hiroshi Fujioka, Institute of Industrial Science, The University of Tokyo (Japan)

  • 9 Laser Diodes

    Tetsuya Takeuchi, Meijo University (Japan)

  • 10 VCSEL I

    Martin D. Dawson, Fraunhofer UK Research Ltd. (United Kingdom)

  • 11 VCSEL II

    Motoaki Iwaya, Meijo University (Japan)

  • 12 Micro LEDs I

    Jung Han, Yale University (United States)

  • 13 Micro LEDs II

    François Templier, Université Grenoble Alpes, CEA-LETI (France)

  • 14 UV LEDs

    Zlatko Sitar, North Carolina State University (United States)

  • 15 LEDs

    Vitaliy Avrutin, Virginia Commonwealth University (United States)

© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
"Front Matter: Volume 10918", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091801 (7 May 2019); https://doi.org/10.1117/12.2531211
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