III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors

Jialin Wang; Chuan-Wei Tsou; Hoon Jeong; Young-Jae Park; Theeradetch Detchprohm; Karan Mehta; P. Douglas Yoder; Russell D. Dupuis; Shyh-Chiang Shen

doi:10.1117/12.2510860

1 March 2019 III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors

Jialin Wang, Chuan-Wei Tsou, Hoon Jeong, Young-Jae Park, Theeradetch Detchprohm, Karan Mehta, P. Douglas Yoder, Russell D. Dupuis, Shyh-Chiang Shen

Author Affiliations +

Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 109180E (2019) https://doi.org/10.1117/12.2510860
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We report III-N surface-emitting resonant-cavity light-emitting diodes (RCLEDs) at λ = 375 nm using a novel hybridmirror approach. The hybrid mirrors consist of 5 pairs of air-gap/AlGaN distributed Bragg reflector (DBR) at the bottom side of the vertical cavity and HfO₂/SiO₂ dielectric DBR (DDBR) on the top to facilitate the formation of a resonant cavity for nitride-based surface light emitting diodes. The air-gap/AlGaN DBR replaces the conventional thick stack of semiconductor DBR to achieve high reflectivity. Hybrid-mirror III-N RCLEDs with airgap/AlGaN DBR mirror were fabricated and the results showed that the III-N RCLEDs achieved high current density operation up to 40 kA/cm² with a peak emission wavelength atλ = 375 nm and a full-width-half-maximum (FWHM) of 9.3 nm at room temperature.

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Jialin Wang, Chuan-Wei Tsou, Hoon Jeong, Young-Jae Park, Theeradetch Detchprohm, Karan Mehta, P. Douglas Yoder, Russell D. Dupuis, and Shyh-Chiang Shen "III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180E (1 March 2019); https://doi.org/10.1117/12.2510860

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