Green InGaN/GaN based LEDs: high luminance and blue shift

Anis Daami; François Olivier; Ludovic Dupré; Christophe Licitra; Franck Henry; François Templier; Stéphanie Le Calvez

doi:10.1117/12.2509396

1 March 2019 Green InGaN/GaN based LEDs: high luminance and blue shift

Anis Daami, François Olivier, Ludovic Dupré, Christophe Licitra, Franck Henry, François Templier, Stéphanie Le Calvez

Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 109180M (2019) https://doi.org/10.1117/12.2509396
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We report in this paper electro-optical results on InGaN/GaN based green micro light-emitting diodes (μLEDs). Currentlight- voltage measurements reveal that the external quantum efficiency (EQE) behavior versus charge injection does not follow the ABC model prediction. Light-emission homogeneity investigation, carried out by photoluminescence mapping, shows that the Quantum Confinement Starck Effect (QCSE) is less significant at the edges of μLEDs. Electroluminescence shows a subsequent color green-to-blue deviation at high carrier injection levels. The extracted spectra at different current injection levels tend to show the appearance of discrete wavelength emissions. These observations may enhance the hypothesis that higher-energy excited-levels in InGaN quantum wells may also contribute to the blue shift, solely attributed to QCSE lessening under intense electric field magnitudes. We hereby present first results dealing with green μLEDs electro-optical performances with regards to their size.

Conference Presentation

Citation Download Citation

Anis Daami, François Olivier, Ludovic Dupré, Christophe Licitra, Franck Henry, François Templier, and Stéphanie Le Calvez "Green InGaN/GaN based LEDs: high luminance and blue shift", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180M (1 March 2019); https://doi.org/10.1117/12.2509396

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