Paper
1 March 2019 Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area
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Abstract
Front-illuminated GaN p-i-p-i-n separate-absorption and multiplication avalanche photodiode (SAM-APD) epitaxial structures were grown by metalorganic chemical vapor deposition (MOCVD) on n-type bulk GaN substrates and fabricated into 4×4 arrays with a large detection area of 100×100 μm2. The SAM-APD array showed a uniform distribution of dark current density of JDark<(5.1±0.8)×10-8 A/cm2 at reverse bias (VR) of 44 V except for two of them. In addition, the average onset points of breakdown voltages (VBR) of the SAM-APD array was 73.1±0.21 V, and no microplasmas were visually observed after multiple times I-V scans.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mi-Hee Ji, Hoon Jeong, Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Theeradetch Detchprohm, Ashok K. Sood, P. Parminder Ghuman, Sachidananda Babu, Nibir K. Dhar, Jay Lewis, and Russell D. Dupuis "Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091814 (1 March 2019); https://doi.org/10.1117/12.2507880
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Cited by 3 scholarly publications.
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KEYWORDS
Gallium nitride

Avalanche photodiodes

Absorption

Ultraviolet radiation

Detector arrays

Metalorganic chemical vapor deposition

Back illuminated sensors

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