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1 March 2019 Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
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Proceedings Volume 10919, Oxide-based Materials and Devices X; 1091910 (2019) https://doi.org/10.1117/12.2518888
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga2O3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga2O3.
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© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, and Michele Baldini "Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy", Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091910 (1 March 2019); doi: 10.1117/12.2518888; https://doi.org/10.1117/12.2518888
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