Gallium-oxide trench-type devices

K. Sasaki; S. Yamakoshi; A. Kuramata

doi:10.1117/12.2515491

Translator Disclaimer

You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.

Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.

1 March 2019 Gallium-oxide trench-type devices

K. Sasaki; S. Yamakoshi; A. Kuramata

Author Affiliations +

K. Sasaki , S. Yamakoshi , A. Kuramata
Novel Crystal Technology, Inc. (Japan)

Proceedings Volume 10919, Oxide-based Materials and Devices X; 1091913 (2019) https://doi.org/10.1117/12.2515491
Event: SPIE OPTO, 2019, San Francisco, California, United States

ARTICLE
FIGURES & TABLES
REFERENCES
CITED BY
DOWNLOAD PDF SAVE TO MY LIBRARY

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

Abstract

Gallium oxide (β-Ga₂O₃) is a suitable material for next generation high power devices because of its huge critical electric field strength. However, most current device structures are not enough to take advantage of the full potential of Ga₂O₃ because these structures are optimized for material properties of silicon. To bring out the potential of Ga₂O₃, we propose a trench structure. First, we made Ga₂O₃ metal-oxide-semiconductor Schottky barrier diodes (MOSSBDs). The HfO₂ film was deposited on the trench bottom and sidewall. Ga₂O₃ MOSSBD had a small leakage current level, and had about a 40% lower forward voltage than that of the commercially available SiC SBDs. We thus successfully demonstrated that the performance of Ga₂O₃ devices can exceed that of SiC devices. Next, we made Ga₂O₃ junction barrier Schottky (JBS) diodes. p-type region was made by p-type NiO. The Ga₂O₃ JBS diode had several orders of magnitude smaller leakage current than that of the normal SBD. This result indicates that the electric field at the Schottky junction decreased as a result of using the JBS structure. Finally, we fabricated Ga₂O₃ trench MOS field effect transistors. We used a static induction transistor-type structure that can be made only with n-type semiconductors. Si-doped Ga₂O₃ n⁺ contact and n^-drift layers were grown on Sn-doped (001) Ga₂O₃ substrate with HVPE. The gate dielectric was HfO₂. The device showed clear current modulation characteristics and a maximum current density of 1.36 kA/cm². The device had a high on-off ratio of over 10⁷.

Conference Presentation

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account

Citation Download Citation

K. Sasaki, S. Yamakoshi, and A. Kuramata "Gallium-oxide trench-type devices", Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091913 (1 March 2019); doi: 10.1117/12.2515491; https://doi.org/10.1117/12.2515491

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

PROCEEDINGS
6 PAGES + PRESENTATION

DOWNLOAD PDF SAVE TO MY LIBRARY

WATCH
PRESENTATION

GET CITATION

< Previous Article

Next Article >

KEYWORDS

Diodes

Field effect transistors

Electrodes

Molybdenum

Doping

Semiconducting wafers

Gallium

Oxides

Show All Keywords

RELATED CONTENT

New Generation MOSFET Design for Battery Powered Portable Applications
Proceedings of SPIE (October 14 2012)

Gate oxide damage and evaluation techniques
Proceedings of SPIE (April 15 1993)

Low energy BF2, BCl2, and BBr2 implants for ultrashallow P+...
Proceedings of SPIE (August 26 1997)

New hot-carrier-resistant P-I-N MOSFET structure
Proceedings of SPIE (September 08 1994)

Micropower supply for electrostatic micromotors
Proceedings of SPIE (December 17 1995)

Photoluminescence and electroluminescence studies on ITO SiO2 Si tunneling diodes...
Proceedings of SPIE (November 14 2002)

Empirical model of effective channel length (Leff) for 0.25 um...
Proceedings of SPIE (October 23 2000)

Subscribe to Digital Library

Receive Erratum Email Alert

Erratum Email Alerts notify you when an article has been updated or the paper is withdrawn.

Visit My Account to manage your email alerts.

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

The alert successfully saved.

Visit My Account to manage your email alerts.

The alert did not successfully save. Please try again later.

K. Sasaki, S. Yamakoshi, A. Kuramata, "Gallium-oxide trench-type devices," Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091913 (1 March 2019);

Include:

Citation Only

Citation & Abstract

Format:

RIS (Zotero)

EndNote

BibTex

Medlars

ProCite

Ref Works

Show All Keywords

Keywords/Phrases

Search In:

Publication Years