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1 March 2019 DC and dynamic switching characteristics of field-plated vertical geometry β-Ga2O3 rectifiers
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Proceedings Volume 10919, Oxide-based Materials and Devices X; 1091916 (2019)
Event: SPIE OPTO, 2019, San Francisco, California, United States
Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga2O3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 1016 cm-3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga2O3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm2 ) Ga2O3 rectifiers were fabricated on a Si-doped n-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga2O3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga2O3 rectifiers. The on-state resistance was 0.26 Ω·cm2 for these largest diodes, decreasing to 5.9 × 10-4 Ω·cm2 for 40x40 μm2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10-3 cm2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga2O3 drift layers. These devices were switched from 0.225 A to -700 V with trr of 82 ns, and from 1 A to -300 V with trr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of trr up to 150°C.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiancheng Yang, Patrick Carey, Fan Ren, Yen-Ting Chen, Y. Liao, Chin-Wei Chang, Jenshan Lin, Marko Tadjer, S. J. Pearton, David J. Smith, and Akito Kuramata "DC and dynamic switching characteristics of field-plated vertical geometry β-Ga2O3 rectifiers", Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091916 (1 March 2019); doi: 10.1117/12.2515006;


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