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12 March 2019 p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition
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Proceedings Volume 10919, Oxide-based Materials and Devices X; 109191H (2019) https://doi.org/10.1117/12.2520124
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on Si3N4/SiO2/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a VON close to zero, a channel mobility of ~ 1 cm2/Vs, a gate leakage current (at +5V) of 0.8 mA and an ION/IOFF ratio (at a Vgs of -15V) of ~ 103. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ~11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. E. Sandana, D. J. Rogers, F. H. Teherani, P. Bove, R. McClintock, and M. Razeghi "p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109191H (12 March 2019); doi: 10.1117/12.2520124; https://doi.org/10.1117/12.2520124
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