Translator Disclaimer
1 March 2019 Synthesis and characterization of SnO2/graphene transparent conducting films
Author Affiliations +
Proceedings Volume 10919, Oxide-based Materials and Devices X; 109191J (2019) https://doi.org/10.1117/12.2508030
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
By incorporating low weight percentages of graphene in our precursor solution and using a technique derived from spray pyrolysis, we obtained a low cost TCO with excellent properties, characterized by AFM, UV-VIS and Hall Effect. The film roughness was calculated to be ~7.49-12.7 nm, while band gap was determined to be ~4.0-4.2 eV. The material’s optical transparency ranges from 84-86% and its resistivity was measured to be ~5.5-8.5 x10-3 Ω cm. With these results, we suggest that the obtained material is a proper candidate for use in photovoltaic applications, such as Grätzel solar cells, which will be our main focus.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Esparza, V. Marañón, C. Enríquez, H. Pérez, J. Castañeda, R. Rodríguez, R. Patakfalvi, E. Rosendo, and R. Sato "Synthesis and characterization of SnO2/graphene transparent conducting films", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109191J (1 March 2019); doi: 10.1117/12.2508030; https://doi.org/10.1117/12.2508030
PROCEEDINGS
8 PAGES + PRESENTATION

SHARE
Advertisement
Advertisement
Back to Top