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1 March 2019 Augmenting optical and structural properties in Zn0.85Mg0.15O thin film with P-B co-doping
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Proceedings Volume 10919, Oxide-based Materials and Devices X; 109192I (2019)
Event: SPIE OPTO, 2019, San Francisco, California, United States
Semiconductor industry thrives on the principle of continuous improvement and it has come a long way relying on that. Zinc oxide (ZnO) semiconductors is one such candidate whose bandgap can be tuned by assimilation of Mg thus making it a promising candidate for various optoelectronic applications. But as in case with ZnO, zinc magnesium oxide (ZnMgO) too has difficulty in achieving p-type conductivity due to native donor defects. For achieving p-type conductivity in such materials, co-doping technique seems to be the most viable solution as it improves the acceptor solubility and also lowers acceptor energy levels. In this report, we have studied the effect of boron doping on the optical and structural properties of phosphorus doped Zn0.85Mg0.15O thin film. Plasma immersion ion implantation (PIII) technique was used to dope RF sputtered Zn0.85Mg0.15O film with phosphorus for 70 s followed by boron doping for 5 s. The sample was further annealed at 1000oC in oxygen ambience for 10s. Low temperature photoluminescence (PL) spectra exhibited improvement in acceptor type behaviour with free acceptor (FA) peak at around 3.55 eV and near band edge (NBE) emission was further improved with the presence of free exciton (FX) peak at around 3.65 eV. These peaks were absent in phosphorus doped sample. High resolution x-ray diffraction (HRXRD) showed <002< orientation for codoped samples. X-ray photoelectron spectroscopy (XPS) confirmed the presence of boron and increment in phosphorus concentration with co-doping.
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Sushama Sushama, Punam Murkute, Hemant Ghadi, Vinayak Chavan, and Subhananda Chakrabarti "Augmenting optical and structural properties in Zn0.85Mg0.15O thin film with P-B co-doping", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192I (1 March 2019);

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