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4 March 2019 Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide
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Abstract
We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB∕cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alberto Della Torre , Milan Sinobad, Barry Luther-Davies, Pan Ma, Stephen Madden, Sukanta Debbarma, Khu Vu, David J. Moss, Arnan Mitchell, Jean-Michel Hartmann, Jean-Marc Fedeli, Christelle Monat, and Christian Grillet "Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide", Proc. SPIE 10921, Integrated Optics: Devices, Materials, and Technologies XXIII, 109210A (4 March 2019); https://doi.org/10.1117/12.2517866
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