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4 March 2019 High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits
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Proceedings Volume 10923, Silicon Photonics XIV; 1092305 (2019) https://doi.org/10.1117/12.2507373
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grigorij Muliuk, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, and Günther Roelkens "High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits", Proc. SPIE 10923, Silicon Photonics XIV, 1092305 (4 March 2019); https://doi.org/10.1117/12.2507373
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