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4 March 2019 On-chip amplifiers and lasers on the Al2O3 integrated photonics platform (Conference Presentation)
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Proceedings Volume 10923, Silicon Photonics XIV; 109230B (2019) https://doi.org/10.1117/12.2509962
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Amorphous Al2O3 is an attractive material for integrated photonics, providing both active and passive functionalities. Al2O3 exhibits high solubility for rare-earth ions with moderate quenching of luminescence, a wide transparency window (150-7000 nm) and low propagation loss. It is therefore a very attractive material for visible, near- and mid-IR on-chip active devices. We have developed two different integration procedures to integrate Al2O3 onto passive photonic platforms. A double photonic layer integration scheme permits the low-loss integration of rare-earth ion doped Al2O3 onto the Si3N4 photonic platform. A single photonic layer integration scheme, based on the photonic damascene process, permits the creation of active and passive regions at the same level on a wafer, with the consequent reduction of the number of fabrication steps compared to the vertical integration of two materials. On-chip amplifiers on Si3N4 with more than 10 dB of net gain at 1550 nm as well as the realization of narrow linewidth lasers on active-passive Al2O3 for label-free sensing applications will be discussed.
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Sonia M. García-Blanco, Carlijn I. van Emmerik, Jinfeng Mu, Michiel de Goede, Meindert Dijkstra, and Lantian Chang "On-chip amplifiers and lasers on the Al2O3 integrated photonics platform (Conference Presentation)", Proc. SPIE 10923, Silicon Photonics XIV, 109230B (4 March 2019); https://doi.org/10.1117/12.2509962
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