Germanium ion implantation for trimming the coupling efficiency of silicon racetrack resonators

Milan M. Milosevic; Xingshi Yu; Xia Chen; Ozan Aktas; Swe Zin Oo; Ali Z. Khokhar; David J. Thomson; Harold M. H. Chong; Anna C. Peacock; Shinichi Saito; Graham T. Reed

doi:10.1117/12.2508805

4 March 2019 Germanium ion implantation for trimming the coupling efficiency of silicon racetrack resonators

Milan M. Milosevic, Xingshi Yu, Xia Chen, Ozan Aktas, Swe Zin Oo, Ali Z. Khokhar, David J. Thomson, Harold M. H. Chong, Anna C. Peacock, Shinichi Saito, Graham T. Reed

Author Affiliations +

Proceedings Volume 10923, Silicon Photonics XIV; 109230R (2019) https://doi.org/10.1117/12.2508805
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In recent years, we have presented results on the development of a variety of silicon photonic devices such as erasable gratings and directional couplers, tunable resonators and Mach-Zehnder interferometers, and programmable photonic circuits using germanium ion implantation and localised laser annealing. In this paper we have carried out experiments to analyse a series of devices that can be fabricated using the same technology, particularly silicon-on-insulator racetrack resonators which are very sensitive to fabrication imperfections. Simulation and experimental results revealed the ability to permanently optimise the coupling efficiency of these structures by selective localised laser annealing.

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Milan M. Milosevic, Xingshi Yu, Xia Chen, Ozan Aktas, Swe Zin Oo, Ali Z. Khokhar, David J. Thomson, Harold M. H. Chong, Anna C. Peacock, Shinichi Saito, and Graham T. Reed "Germanium ion implantation for trimming the coupling efficiency of silicon racetrack resonators", Proc. SPIE 10923, Silicon Photonics XIV, 109230R (4 March 2019); https://doi.org/10.1117/12.2508805

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