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4 March 2019 Parametric analysis of silicon nanowire based ring resonator
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Proceedings Volume 10923, Silicon Photonics XIV; 109231G (2019)
Event: SPIE OPTO, 2019, San Francisco, California, United States
In this paper a subwavelength ring resonator based on array of silicon nanowire is proposed. Silicon-on-Insulator (SOI) based structure is employed to couple resonance wavelength from one waveguide to another waveguide in opposite direction via ring waveguide structure. Silicon nanowire waveguide having standard SOI height technology of 220nm is considered for designing of proposed ring resonator structure. Replacing silicon nanowire technology with conventional integrated optics takes the photonics to a new level, where the cavity between nanowires serves as a nice optical confinement region. The advantage of using silicon nanowire over ring resonator can be seen in the narrowness of the filtered wavelength ranges and hence the sharpness of the filtering process. This structure finds its application as a notch filter to filter out the C-band wavelengths by adjusting waveguide geometrical parameters.
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Ritu Raj Singh, Abhinav Gautam, and Vishnu Priye "Parametric analysis of silicon nanowire based ring resonator", Proc. SPIE 10923, Silicon Photonics XIV, 109231G (4 March 2019);

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