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8 March 2019 A 3C-SiC-on-oxide (SiCOI) platform enabling high-Q resonators over an octave frequency range from visible to near-infrared (Conference Presentation)
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Abstract
3C-SiC is a large bandgap material with a wide range of applications both in electronics and photonics. Here we demonstrate a low-loss 3C-SiC-on-Oxide (SiCOI) platform over an octave frequency range from visible to near-infrared. A 3C-SiC film is transferred onto an oxide-on-silicon substrate through wafer bonding to form a reliable SiCOI platform suitable for device integration, and the defect-rich transition layer in SiC is removed by chemical mechanical polishing (CMP). With low density of defects and a small root-mean-square (RMS) surface roughness (Rq) of about 1.4 Å in our SiC thin film, we are able to demonstrate record-high intrinsic quality factors of ~250,000 at 1550 nm wavelength and ~85,000 at 770 nm wavelength. Our low-loss SiCOI platform is promising for wideband nonlinear optical applications including second harmonic generation (SHG), four wave mixing (FWM), and Kerr frequency comb.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tianren Fan, Hesam Moradinejad, Xi Wu, Ali A. Eftekhar, and Ali Adibi "A 3C-SiC-on-oxide (SiCOI) platform enabling high-Q resonators over an octave frequency range from visible to near-infrared (Conference Presentation)", Proc. SPIE 10927, Photonic and Phononic Properties of Engineered Nanostructures IX, 109270S (8 March 2019); https://doi.org/10.1117/12.2517638
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