Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (Conference Presentation)

Hannes Schuermann; Gordon Schmidt; Christoph Berger; Sebastian Metzner; Peter Veit; Jürgen Bläsing; Frank Bertram; Armin Dadgar; André Strittmatter; Jürgen Christen; Stefan Kalinowski; Gordon Callsen; Stefan Jagsch; Markus Wagner; Axel Hoffmann

doi:10.1117/12.2510350

4 March 2019 Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (Conference Presentation)

Hannes Schuermann, Gordon Schmidt, Christoph Berger, Sebastian Metzner, Peter Veit, Jürgen Bläsing, Frank Bertram, Armin Dadgar, André Strittmatter, Jürgen Christen, Stefan Kalinowski, Gordon Callsen, Stefan Jagsch, Markus Wagner, Axel Hoffmann

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Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 109290A (2019) https://doi.org/10.1117/12.2510350
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In this work we show successful metalorganic vapor phase epitaxy (MOVPE) of an AlN/AlGaN distributed Bragg reflector (DBR) that is wavelength matched to GaN quantum dots (QDs) in an AlGaN lambda cavity on top. Full insight into the growth of these structures enables the epitaxy of resonant cavity deep UV single photon emitters. The DBR was grown on an AlN/sapphire template. In order to obtain a high reflectivity as well as a sufficiently large stopband width, the refractive index contrast needs to be maximized. Additionally, the absorption of QD emission in the high gallium containing layer needs to be minimized. A compromise was found for nominal Al-concentration of 70 % in the AlGaN layers. The resulting DBR splits up into self-organized AlN/Al(X)Ga(1-X)N/Al(Y)Ga(1-Y)N trilayers, which add up to desired lambda/2-periods. Therefore, the stopband at 272 nm with a width of 6 nm shows a maximum reflectivity of 99.7 %. GaN QDs were obtained by growth of GaN on AlGaN for 10 s with a V/III-ratio of 30 followed by a growth interruption of 30 s. The QDs exhibit sharp emission lines with a FWHM down to 1 meV in µ-PL measurements. The main intensity of the QD ensemble emission is in the range of 250 nm to 275 nm. Finally, spatially resolved low temperature CL measurements show resonant DBR-enhanced GaN QD emission at 271 nm showing successful wavelength match between a AlN/AlGaN deep UV DBR and GaN QDs in an AlGaN lambda-cavity on top.

Conference Presentation

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Hannes Schuermann, Gordon Schmidt, Christoph Berger, Sebastian Metzner, Peter Veit, Jürgen Bläsing, Frank Bertram, Armin Dadgar, André Strittmatter, Jürgen Christen, Stefan Kalinowski, Gordon Callsen, Stefan Jagsch, Markus Wagner, and Axel Hoffmann "Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (Conference Presentation)", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 109290A (4 March 2019); https://doi.org/10.1117/12.2510350

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KEYWORDS

Gallium nitride

Deep ultraviolet

Distributed Bragg reflectors

Quantum dots

Reflectivity

Absorption

Epitaxy

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