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4 March 2019 Transient cooling of a gallium-arsenide double heterostructure (Conference Presentation)
Jan F. Lippmann, Denis V. Seletskiy
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Proceedings Volume 10936, Photonic Heat Engines: Science and Applications; 1093603 (2019) https://doi.org/10.1117/12.2511361
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Laser cooling of gallium arsenide is of high industrial and academic interest and has been actively investigated using different experimental methods based on steady-state concepts. We demonstrate for the first time an onset of transient cooling in GaAs after an impulsive excitation, verified by two independent methods of time-resolved spectroscopy. We observe that transient cooling lasts for about 100 ps, becoming overwhelmed on longer timescales by parasitic heating associated with the nonlocal character of the background absorption processes. In addition, new insights into the physics of the Urbach tail excitation, being at the heart of the laser cooling in semiconductors, are revealed.
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Jan F. Lippmann and Denis V. Seletskiy "Transient cooling of a gallium-arsenide double heterostructure (Conference Presentation)", Proc. SPIE 10936, Photonic Heat Engines: Science and Applications, 1093603 (4 March 2019); https://doi.org/10.1117/12.2511361
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KEYWORDS
Gallium arsenide
Heterojunctions
Semiconductor lasers
Absorption
Heart
Physics
Picosecond phenomena
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