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1 March 2019 Comprehensive self-consistent analysis of oxide-confined vertical-cavity surface-emitting lasers
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We consider comprehensive description of vertical cavity surface emitting laser (VCSEL) structures in practical cylindrically symmetric geometry. A complete drift-diffusion model for carrier transport in a multilayer semiconductor laser heterostructure including p-n junction is developed. We evaluate the impact of interface grading in distributed Bragg reflectors (DBRs), modulation doping of the DBRs and surrounding layers of the quantum well (QW) as well as drastically material–dependent carrier mobility and recombination constants. Solution of the drift–diffusion model yields spatial profiles of the nonequilibrium carrier concentrations and current. The model is applied as an example to an oxideconfined GaAs/AlGaAs VCSEL. We address both depletion and diffusion capacitance of the device and show that both contributions to the capacitance as well as the differential series resistance critically depend on the injection current and the VCSEL chip design such that, in general, VCSEL cannot be properly modeled by an equivalent circuit approximation. We consider current injection into the aperture region and illustrate the current crowding effects, which result in substantial enhancement of the current density at the tips of the oxide aperture. The effective RC-product can be kept low at a small size of the oxide-confined aperture but only in case where the diameter of the VCSEL mesa is also small.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Kalosha, V. A. Shchukin, N. Ledentsov Jr., and N. N. Ledentsov "Comprehensive self-consistent analysis of oxide-confined vertical-cavity surface-emitting lasers", Proc. SPIE 10938, Vertical-Cavity Surface-Emitting Lasers XXIII, 109380N (1 March 2019);

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