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1 March 2019 Comparison of quantum dot lasers with and without tunnel-injection quantum well
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Abstract
A comparison between QD lasers with and without tunnel-injection QW designs was performed. In both cases, six layers of a QD or TI-QD design were grown by molecular beam epitaxy equipped with group-V valved cracker cells. The InAs QDs are embedded in InAlGaAs barriers lattice matched to InP. The TI-QW consists of InGaAs separated by a thin InAlGaAs tunnel barrier. The lasers were processed into broad area and ridge waveguide lasers. Both laser designs exhibited high modal gain values in the range of 10-15 cm−1 per dot layer. The static and dynamic device properties of the different QD laser designs were measured and compared against each other.
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Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, and Gadi Eisenstein "Comparison of quantum dot lasers with and without tunnel-injection quantum well", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093904 (1 March 2019); https://doi.org/10.1117/12.2511724
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