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1 March 2019 Linewidth broadening factor and optical feedback sensitivity of silicon based quantum dot lasers
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The integration of optical functions on a microelectronic chip brings many innovative perspectives, along with the possibility to enhance the performances of photonic integrated circuits (PIC). Owing to the delta-like density of states, quantum dot lasers (QD) directly grown on silicon are very promising for achieving low-cost transmitters with high thermal stability and large insensitivity to optical reflections. This paper investigates the dynamical and nonlinear properties of silicon based QD lasers through the prism of the linewidth broadening factor (i.e. the so-called α-factor) and the optical feedback dynamics. Results demonstrate that InAs/GaAs p-doped QD lasers epitaxially grown on silicon exhibit very low α-factors, which directly transform into an ultra-large resistance against optical feedback. As opposed to what is observed in heterogeneously integrated quantum well (QW) lasers, no chaotic state occurs owing to the high level of QD size uniformity resulting in a near zero α-factor. Considering these results, this study suggests that QD lasers made with direct epitaxial growth is a powerful solution for integration into silicon CMOS technology, which requires both high thermal stability and feedback resistant lasers.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Grillot, J. Duan, H. Huang, B. Dong, D. Jung, Z. Zhang, J. Norman, and J. E. Bowers "Linewidth broadening factor and optical feedback sensitivity of silicon based quantum dot lasers", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390N (1 March 2019);

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