Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers

A. Nishikawa; A. Loesing; B. Slischka

doi:10.1117/12.2511390

1 March 2019 Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers

A. Nishikawa, A. Loesing, B. Slischka

Author Affiliations +

Proceedings Volume 10940, Light-Emitting Devices, Materials, and Applications; 109400Z (2019) https://doi.org/10.1117/12.2511390
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN-on-Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN-on-sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN-on-Si, demonstration of such cost advantages in micro LED application is not wide-spread yet. In this presentation, we have demonstrated excellent emission uniformity with well-controlled strain by precise strain-engineering. This opens the way to use the advantages of GaN-on-Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.

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A. Nishikawa, A. Loesing, and B. Slischka "Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers", Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400Z (1 March 2019); https://doi.org/10.1117/12.2511390

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KEYWORDS

Light emitting diodes

Semiconducting wafers

LED displays

Silicon

Manufacturing

Gallium nitride

Temperature metrology

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