Influence of mask line width roughness on programmed pattern defect printability

Takeshi Yamane; Yasutaka Morikawa; Takashi Kamo

doi:10.1117/12.2515145

26 March 2019 Influence of mask line width roughness on programmed pattern defect printability

Takeshi Yamane, Yasutaka Morikawa, Takashi Kamo

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109570M (2019) https://doi.org/10.1117/12.2515145
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Programmed defect masks (PDMs) of a tantalum-based absorber were fabricated by a conventional and improved process that decreased the mask line width roughness (LWR). The improved mask LWR decreased the minimum size of recognizable defects from 18.6 nm to 10.9 nm. The PDMs were printed on wafers and their defect printabilities were compared. The correlation coefficients of the relationship between the mask defect size and deviation of wafer critical dimension (CD) caused by the defects were calculated. A significance test of the correlation coefficients of the PDMs produced by the conventional and improved process indicated there was no significant difference between them. This means that the mask LWR did not have a significant influence on defect printability.

Conference Presentation

Citation Download Citation

Takeshi Yamane, Yasutaka Morikawa, and Takashi Kamo "Influence of mask line width roughness on programmed pattern defect printability", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570M (26 March 2019); https://doi.org/10.1117/12.2515145

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