Calibrated PSCAR stochastic simulation

Cong Que Dinh; Seiji Nagahara; Gousuke Shiraishi; Yukie Minekawa; Yuya Kamei; Michael Carcasi; Hiroyuki Ide; Yoshihiro Kondo; Yuichi Yoshida; Kosuke Yoshihara; Ryo Shimada; Masaru Tomono; Teruhiko Moriya; Kazuhiro Takeshita; Kathleen Nafus; Serge Biesemans; John S. Petersen; Danilo De Simone; Philippe Foubert; Peter De Bisschop; Geert Vandenberghe; Hans-Jürgen Stock; Balint Meliorisz

doi:10.1117/12.2515183

26 March 2019 Calibrated PSCAR stochastic simulation

Cong Que Dinh, Seiji Nagahara, Gousuke Shiraishi, Yukie Minekawa, Yuya Kamei, Michael Carcasi, Hiroyuki Ide, Yoshihiro Kondo, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Teruhiko Moriya, Kazuhiro Takeshita, Kathleen Nafus, Serge Biesemans, John S. Petersen, Danilo De Simone, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

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Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109571O (2019) https://doi.org/10.1117/12.2515183
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Photosensitized Chemically Amplified Resist^TM (PSCAR^TM) has been demonstrated as a promising solution for a high sensitivity resist in EUV lithography mass production. This paper describes the successful calibration of a PSCAR resist model for deployment within rigorous lithography process simulation, capturing continuum as well as stochastic effects. Verification of the calibrated model parameters was performed with new patterns or with new resist formulations with good agreement. The reduction of required EUV dose of PSCAR resist while maintaining similar roughness levels have been achieved both from experimental result and from simulated result. The simulation of PSCAR continues to be a great tool for understanding, predicting, and optimizing the process of PSCAR.

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Cong Que Dinh, Seiji Nagahara, Gousuke Shiraishi, Yukie Minekawa, Yuya Kamei, Michael Carcasi, Hiroyuki Ide, Yoshihiro Kondo, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Teruhiko Moriya, Kazuhiro Takeshita, Kathleen Nafus, Serge Biesemans, John S. Petersen, Danilo De Simone, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, and Balint Meliorisz "Calibrated PSCAR stochastic simulation", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571O (26 March 2019); https://doi.org/10.1117/12.2515183

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