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26 March 2019 Linewidth and roughness measurement of SAOP by using FIB and Planer-TEM as reference metrology
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In the next generation SAOP (Self-aligned Octuplet patterning) process, the line width and LWR (Line Width Roughness) measurement of lines with sub-10 nm is required. We have already proposed a novel method of line width and LWR measurement with sub-nanometer uncertainty by using FIB (Focused Ion Beam) processing, and TEM (Transmission Electron Microscope) images as reference metrology. In the previous report, we applied the method to SAQP features. A specimen of the SAQP FinFET line and space device is coated with carbon and cut horizontally into a thin planar sample by the FIB sampling system. The thin sample is observed by using planar-TEM. The average PSD of LWR of SAQP FinFET sample at the upper and lower positions calculated from planar-TEM images. In this article, we apply the methodology to line width and roughness measurement of advanced features by SAOP process. The features are vertically or horizontally sliced as a thin specimen by FIB micro sampling system. LWR is calculated from the edges positions, and PSD (Power Spectrum Density) is analyzed for the reference metrology.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyoshi Takamasu, Satoru Takahashi, Hiroki Kawada, Masami Ikota, Stefan Decoster, Frederic Lazzarino, and Gian Lorusso "Linewidth and roughness measurement of SAOP by using FIB and Planer-TEM as reference metrology", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109590Q (26 March 2019);

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