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26 March 2019 Overlay run-to-run control based on device structure measured overlay in DRAM HVM
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Abstract
In leading edge lithography, overlay is usually controlled by feedback based on measurements on overlay targets, which are located between the dies. These measurements are done directly after developing the wafer. However, it is well-known that the measurement on the overlay marks does not always represent the actual device overlay correctly. This can be due to different factors, including mask writing errors, target-to-device differences and non-litho processing effects, for instance by the etch process.1

In order to verify these differences, overlay measurements are regularly done after the final etch process. These post-etch overlay measurements can be performed by using the same overlay targets used in post-litho overlay measurement or other targets. Alternatively, they can be in-device measurements using electron beam measurement tools (for instance CD-SEM). The difference is calculated between the standard post-litho measurement and the post-etch measurement. The calculation result is known as litho-etch overlay bias.

This study focuses on the feasibility of post-etch overlay measurement run-to-run (R2R) feedback instead of post-lithography R2R feedback correction. It is known that the post-litho processes have strong non-linear influences on the in-device overlay signature and, hence, on the final overlay budget. A post-etch based R2R correction is able to mitigate such influences.2

This paper addresses several questions and challenges related to post-etch overlay measurement with respect to R2R feedback control. The behavior of the overlay targets in the scribe-line is compared to the overlay behavior of device structures. The influence of different measurement methodologies (optical image-based overlay vs. electron microscope overlay measurement) was evaluated. Scribe-line standard overlay targets will be measured with electron microscope measurement. In addition, the influence of the intra-field location of the targets on device-to-target shifts was evaluated.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hsiao Lun Chu, Foster Huang, Steven Tottewitz, Boris Habets, Patrick Lomtscher, Hsiao-Lin Hsu, Afu Chiu, and Rex H. Liu "Overlay run-to-run control based on device structure measured overlay in DRAM HVM", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592P (26 March 2019); https://doi.org/10.1117/12.2515203
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