Intra-field alignment for overlay feed-forward simulation with sampling optimization

Cheng Hao Yang; Chun Chi Yu; Patrick Lomtscher; Martin Freitag; Steven Tottewitz; Boris Habets; Hsiao Lin Hsu; Rex H. Liu

doi:10.1117/12.2514984

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26 March 2019 Intra-field alignment for overlay feed-forward simulation with sampling optimization

Cheng Hao Yang, Chun Chi Yu, Patrick Lomtscher, Martin Freitag, Steven Tottewitz, Boris Habets, Hsiao Lin Hsu, Rex H. Liu

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Proceedings Volume 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII; 109592T (2019) https://doi.org/10.1117/12.2514984
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

It was proven that higher order intra-field alignment data modeling and correction has the potential to improve overlay performance by correcting reticle heating and lens heating effects intra-wafer and wafer- to-wafer.¹But there were also challenges shown that needed further investigation. As the alignment measurement is done on a coordinate system with absolute positions, the modeled iHOPC values might be high. A suitable method needs to be developed to distinguish between tool-to-tool offsets, process influence and layer-to-layer tool stack effect. In this paper we will take the next step and evaluate the overlay improvement potential by using intra-field alignment data in an overlay feed-forward simulation. An overlay run-to-run simulation is afterwards performed to estimate the optimization potential. To simulate higher order intra-field overlay, dense alignment data is needed. Facing the challenge of optimizing the number of measured marks but not losing relevant information, an intra-field alignment mark sampling optimization is done to find the best compromise between throughput and overlay accuracy.

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Cheng Hao Yang, Chun Chi Yu, Patrick Lomtscher, Martin Freitag, Steven Tottewitz, Boris Habets, Hsiao Lin Hsu, and Rex H. Liu "Intra-field alignment for overlay feed-forward simulation with sampling optimization", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592T (26 March 2019); https://doi.org/10.1117/12.2514984

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