In this work we explore the different multipatterning options for lines and blocks at pitches below 20 nm. As such, we will demonstrate and compare three different patterning options to enable 16 nm pitch gratings: 193i-based SAOP, EUV-based SADP and EUV-based SAQP. Finally, we will also elaborate on a self-aligned patterning scheme which does not define lines and blocks sequentially anymore but integrates them in a mixed mode. This patterning approach (SALELE) makes use of two LE masks and two self-aligned block masks. We will present its development status at relaxed pitch (28 nm) and discuss its advantages for future technology nodes.
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