Furthermore, on acute 3-dimensional semiconductor topography, the creation of highly doped abrupt, ultra-shallow junctions with three-dimensional control are essential for successful source-drain contacts. In consideration of this need, we extended the above polymer brush concept further by incorporating a suitable implant dopant atom, such as boron, into the monomer structure. After conformal coating and a subsequent rapid thermal annealing process, the dopant atom is driven into the semiconductor substrate underneath the polymer film. This is potentially very useful for uniform all-around doping of 3-dimensional topography such as FinFETs or Nanowire-FETs. A high dopant dosage on silicon substrate with appropriate shallow implant characteristics was demonstrated for the end-functionalized dopant polymer brush, highlighting one of the promising applications of such conformal coatings.
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