Paper
25 March 2019 Radical sensitive zinc-based nanoparticle EUV photoresists
Author Affiliations +
Abstract
Zirconium- and hafnium-based nanoparticles demonstrated good patterning behavior in deep-ultra-violet (DUV), electron-beam (E-beam) and extreme ultra-violet (EUV) lithography. Among these Zr- and Hf-based hybrid nanoparticles, the methacrylic acid (MAA) modified zirconium oxide nanoparticles1 (ZrO2-MAA-NP) give out the best over-all-performance: 26 nm lines are obtained at 4.2 mJ/cm2. However, both Zr and Hf are relatively low EUV absorbing metals2, and integration of high EUV absorption elements, such as Zn, is considered to be a more promising route to further improve lithographic performance under EUV radiation. Zinc-based nanoparticle photoresists, possessing ultra-small size, have exhibited promising sensitivities and better resolution. Here, we combined methacrylate ligand and high EUV absorption element Zn, to demonstrate a novel zinc oxide-based nanoparticle photoresist using a photo-radical generator (PRG). Compared with conventional photo-acid initiated nanoparticle-based photoresists, a better resolution and sensitivity has been found with the addition of photo-radical generator (PRG). This unique behavior is promising to provide new possibilities for rapid three-dimensional (3D) -printing.
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Kou Yang, Hong Xu, Kazunori Sakai, Vasiliki Kosma, Emmanuel P. Giannelis, and Christopher K. Ober "Radical sensitive zinc-based nanoparticle EUV photoresists", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109601R (25 March 2019); https://doi.org/10.1117/12.2514982
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Nanoparticles

Photoresist materials

Extreme ultraviolet lithography

Extreme ultraviolet

Deep ultraviolet

Lithography

Optical lithography

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