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25 March 2019 Bridging the defect gap in EUV photoresist
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Abstract
Continued momentum in the development of EUV photolithography toward high volume manufacturing has driven the evolution of increased photoresist purity requirements. Further scaling will intensify the challenge to improve inline yield and reliability performance. The composition of EUV photoresist materials requires careful compositional balance and stability to ensure expected lithographic performance. It is therefore critical to understand and assess interactions between photomaterials and the many touchpoints along the entire value chain to maintain the purity and integrity of these materials.

Filtration technology is an important part of maintaining a material’s purity. When choosing a filter, there are many factors to consider, starting with the membrane material. For instance, nylon filters effectively remove polar polymers through an adsorption mechanism. Particulate contaminants are often removed by size-exclusion, mostly commonly observed with certain UPE (ultra-high molecular weight polyethylene) membranes. As lithography materials change and the smallest defects become even more challenging to detect, filtration technology innovation, such as the development of OktolexTM, is needed to meet the most stringent defect targets. In this paper, a tailored filter is introduced to enhance filtration performance and address specific defect sources in EUV photoresists. Results and possible mechanisms of the defect reduction will be discussed.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kohyama, Fumiya Kaneko, Alketa Gjoka, and Jad Jaber "Bridging the defect gap in EUV photoresist ", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109601V (25 March 2019); https://doi.org/10.1117/12.2514969
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