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25 March 2019 Contact hole shrink of 193nm NTD immersion resist
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Abstract
Miniaturization of lithographic feature sizes via shrink technologies is under development in order to extend 193nm immersion lithographic capabilities and achieve sub-20nm critical dimensions (CD) in integrated circuit manufacturing before extreme ultraviolet lithography comes online. It was found that precisely controlled polymers comprising a grafting unit and a shrink unit are capable of reducing pattern dimensions formed in negative tone development (NTD) photoresists. Fundamental studies were pursued regarding the type of grafting chemistry, the shrink monomer and polymer backbone choice, and differences between polymer architectures. Mechanistic studies demonstrated that shrink amount could be tuned by choice of monomer, polymer molecular weight, and choice of grafting unit. These studies permitted the development of several generations of grafting polymer platforms to meet a range of desired CD shrink targets from less than 10nm shrink to 30nm shrink on contact hole or line/space patterns. The shrink technology further exhibits improved process window compared to optical lithography at the same CD and low defectivity, highlighting the use of this technology in advanced semiconductor processing nodes.
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Joshua Kaitz, Janet Wu, Vipul Jain, Iou-Sheng Ke, Mingqi Li, Amy Kwok, James Park, Jong Park, Jin Wuk Sung, and Cong Liu "Contact hole shrink of 193nm NTD immersion resist", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 1096022 (25 March 2019); https://doi.org/10.1117/12.2518366
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