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25 March 2019 Advanced EUV negative tone resist and underlayer approaches exhibiting sub-20nm half-pitch resolution
Thomas Gädda, Nguyen Dang Luong, Markus Laukkanen, Kimmo Karaste, Oskari Kähkönen, Emilia Kauppi, Dimitrios Kazazis, Yasin Ekinci, Juha Rantala
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Proceedings Volume 10960, Advances in Patterning Materials and Processes XXXVI; 109600B (2019) https://doi.org/10.1117/12.2515600
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States
Abstract
The RLS trade-off of EUV resists has been a major technical issue for high-volume manufacturing using EUVL. Significant attempts to develop of chemically-amplified resists, metal-containing resists, and a variety of other material classes have been made to obtain low LER at high resolution (R) and at a reasonable sensitivity (S). Previously, we have developed and reported work on silanol-containing polyhydrogensilsesquioxane resins and their use as negative tone resists. The developed silanol-containing polymer resists have demonstrated enhanced EUV sensitivity compared to traditional hydrogen silsesquioxane resins, and at the same time maintaining excellent etch properties. The resist may enable a bilayer stack technology in EUVL. Herein we report novel functionalized polyhydrogensilsesquioxane polymers and their use as negative tone resists. These materials exhibit improved LER/LWR and reasonably good EUV sensitivity. In best cases, data suggests no residues or bridging in the non-exposed areas. The optimized resist exhibits sub-20nm halfpitch resolution, low LER (2-3nm), and reasonable sensitivity (82.5 mJ/cm2). In addition, we also investigated the effect of three organic underlayers for EUV patterning and compared with the silicon substrate.
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Thomas Gädda, Nguyen Dang Luong, Markus Laukkanen, Kimmo Karaste, Oskari Kähkönen, Emilia Kauppi, Dimitrios Kazazis, Yasin Ekinci, and Juha Rantala "Advanced EUV negative tone resist and underlayer approaches exhibiting sub-20nm half-pitch resolution", Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600B (25 March 2019); https://doi.org/10.1117/12.2515600
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KEYWORDS
Extreme ultraviolet lithography
Extreme ultraviolet
Polymers
Electron beam lithography
Line width roughness
Silicon
Line edge roughness
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