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15 November 2018 Study on cascaded tunable DBR semiconductor laser with wide tuning range and fast switching speed
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Proceedings Volume 10964, Tenth International Conference on Information Optics and Photonics; 109644U (2018) https://doi.org/10.1117/12.2506215
Event: Tenth International Conference on Information Optics and Photonics (CIOP 2018), 2018, Beijing, China
Abstract
A compact cascaded tunable distributed Bragg reflection (DBR) semiconductor laser is proposed and simulated. Each laser section (LS) is formed by two passive adjacent grating sections (GSs) with slightly different Bragg wavelengths and an active section (AS) between them. A step-wise grating period profile is designed to realize wide range lasing. Since two LSs share a common GS, the total cavity length of the tunable laser is significantly reduced. As an example, a tunable laser with four GSs and three ASs was designed and analyzed, resulting in a continuous tuning range of 13.2 nm. Furthermore, an improved structure with apodized grating in each GS is proposed for good single mode property. The single mode stability and fabrication tolerance are significantly improved. Particularly, this structure based lasers has a fast switching speed of about 5ns. The proposed structure would benefit the practical applications to the low cost tunable lasers in wavelength division multiplexing (WDM) systems.
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Zhengpeng Zou, Yong Zhao, Chunliang Ma, Min Chen, Yuechun Shi, and Xiangfei Chen "Study on cascaded tunable DBR semiconductor laser with wide tuning range and fast switching speed", Proc. SPIE 10964, Tenth International Conference on Information Optics and Photonics, 109644U (15 November 2018); https://doi.org/10.1117/12.2506215
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